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IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc

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IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc

Name: IS61NLP51236B200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS61NLP51236B-200B3LI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, SDR

Memory Size : 18Mbit

Memory Organization : 512K x 36

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : -

Access Time : 3 ns

Voltage - Supply : 3.135V ~ 3.465V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 165-TBGA

Supplier Device Package : 165-TFBGA (13x15)

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Product Details

DESCRIPTION

The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 209- ball (x72) PBGA packages
• Power supply:
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	165-TBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3.135 V ~ 3.465 V
Supplier-Device-Package	165-TFBGA (13x15)
Memory Capacity	18M (512K x 36)
Memory-Type	SRAM - Synchronous
Speed	200MHz
Format-Memory	RAM

Descriptions

SRAM - Synchronous Memory IC 18Mb (512K x 36) Parallel 200MHz 3ns 165-TFBGA (13x15)

SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3ns 165-Pin TFBGA

SRAM 18Mb, 200Mhz 512K x 36 Sync SRAM

Wholesale IS61NLP51236B-200B3LI IC SRAM 18MBIT PARALLEL 165TFBGA ISSI, Integrated Silicon Solution Inc from china suppliers

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