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IS61NLP25618A-200B3LI-TR IC SRAM 4.5MBIT PARALLEL 165PBGA ISSI, Integrated Silicon Solution Inc

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IS61NLP25618A-200B3LI-TR IC SRAM 4.5MBIT PARALLEL 165PBGA ISSI, Integrated Silicon Solution Inc

Name: IS61NLP25618A200B3LITR IC SRAM 45MBIT PARALLEL 165PBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS61NLP25618A-200B3LI-TR

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, SDR

Memory Size : 4.5Mbit

Memory Organization : 256K x 18

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : -

Access Time : 3.1 ns

Voltage - Supply : 3.135V ~ 3.465V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 165-TBGA

Supplier Device Package : 165-PBGA (13x15)

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Product Details

DESCRIPTION

The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
• Power supply:
NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)
NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	IS61NLP25618A
Type	Synchronous
Packaging	Tape & Reel (TR) Alternate Packaging
Mounting-Style	SMD/SMT
Package-Case	165-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3.135 V ~ 3.465 V
Supplier-Device-Package	165-BGA (13x15)
Memory Capacity	4.5M (256K x 18)
Memory-Type	SRAM - Synchronous
Speed	200MHz
Data-Rate	SDR
Access-Time	3.1 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Interface-Type	Parallel
Organization	256 k x 18
Supply-Current-Max	210 mA
Supply-Voltage-Max	3.465 V
Supply-Voltage-Min	3.135 V
Package-Case	BGA-165
Maximum-Clock-Frequency	200 MHz

Descriptions

SRAM - Synchronous Memory IC 4.5Mb (256K x 18) Parallel 200MHz 3.1ns 165-BGA (13x15)

SRAM Chip Sync Dual 3.3V 4M-Bit 256K x 18 3.1ns 165-Pin BGA T/R

SRAM 4M (256Kx18) 200MHz Sync SRAM 3.3v

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