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IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc

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IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc

Name: IS43R16160F6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS43R16160F-6BLI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR

Memory Size : 256Mbit

Memory Organization : 16M x 16

Memory Interface : Parallel

Clock Frequency : 166 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 700 ps

Voltage - Supply : 2.3V ~ 2.7V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 60-TFBGA

Supplier Device Package : 60-TFBGA (8x13)

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Product Details

FEATURES

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	60-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.3 V ~ 2.7 V
Supplier-Device-Package	60-TFBGA (8x13)
Memory Capacity	256M (16M x 16)
Memory-Type	DDR SDRAM
Speed	166MHz
Format-Memory	RAM

Descriptions

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)

DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 60-Pin TFBGA

DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz

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