Home > Flash Memory IC >

IS42S16320F-7BLI IC DRAM 512MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc

Product Categories

Sanhuang electronics (Hong Kong) Co., Limited

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

IS42S16320F-7BLI IC DRAM 512MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc

Name: IS42S16320F7BLI IC DRAM 512MBIT PAR 54TFBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS42S16320F-7BLI

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM

Memory Size : 512Mbit

Memory Organization : 32M x 16

Memory Interface : Parallel

Clock Frequency : 143 MHz

Write Cycle Time - Word, Page : -

Access Time : 5.4 ns

Voltage - Supply : 3V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 54-TFBGA

Supplier Device Package : 54-TW-BGA (8x13)

Contact Now

Product Details

DEVICE OVERVIEW

ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 8K refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only) x32: 90-ball TF-BGA
• Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC)

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray Alternate Packaging
Package-Case	54-TFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	54-TWBGA (13x8)
Memory Capacity	512M (32M x 16)
Memory-Type	SDRAM
Speed	143MHz
Format-Memory	RAM

Descriptions

SDRAM Memory IC 512Mb (32M x 16) Parallel 143MHz 5.4ns 54-TWBGA (13x8)

DRAM Chip SDRAM 512Mbit 32Mx16 3.3V 54-Pin TW-BGA

DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 ball BGA (8mmx13mm), RoHS, IT

Wholesale IS42S16320F-7BLI IC DRAM 512MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc from china suppliers

IS42S16320F-7BLI IC DRAM 512MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Sanhuang electronics (Hong Kong) Co., Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!