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IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon Solution Inc

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IS43DR16640C-25DBL IC DRAM 1GBIT PARALLEL 84TWBGA ISSI, Integrated Silicon Solution Inc

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS43DR16640C-25DBL

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR2

Memory Size : 1Gbit

Memory Organization : 64M x 16

Memory Interface : Parallel

Clock Frequency : 400 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 400 ps

Voltage - Supply : 1.7V ~ 1.9V

Operating Temperature : 0°C ~ 85°C (TC)

Mounting Type : Surface Mount

Package / Case : 84-TFBGA

Supplier Device Package : 84-TWBGA (8x12.5)

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Product Details

FEATURES

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Manufacturer ISSI
Product-Category DRAM
RoHS Details
Brand ISSI
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part# Description Manufacturer Compare
MT47H64M16NF-25E:M
Memory		 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS43DR16640C-25DBL vs MT47H64M16NF-25E:M
MT47H64M16NF-25EIT:M
Memory		 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS43DR16640C-25DBL vs MT47H64M16NF-25EIT:M
IS43DR16640C-25DBLA2
Memory		 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640C-25DBL vs IS43DR16640C-25DBLA2
IS43DR16640C-25DBLA1
Memory		 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640C-25DBL vs IS43DR16640C-25DBLA1

Descriptions

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ns 84-TWBGA (8x12.5)
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16

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