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IS43R32400E-5BL-TR IC DRAM 128MBIT PAR 144LFBGA ISSI, Integrated Silicon Solution Inc

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IS43R32400E-5BL-TR IC DRAM 128MBIT PAR 144LFBGA ISSI, Integrated Silicon Solution Inc

Name: IS43R32400E5BLTR IC DRAM 128MBIT PAR 144LFBGA ISSI Integrated Silicon Solution Inc
Brand: ISSI, Integrated Silicon Solution Inc
Price: 1 USD

Brand Name : ISSI, Integrated Silicon Solution Inc

Model Number : IS43R32400E-5BL-TR

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR

Memory Size : 128Mbit

Memory Organization : 4M x 32

Memory Interface : Parallel

Clock Frequency : 200 MHz

Write Cycle Time - Word, Page : 15ns

Access Time : 700 ps

Voltage - Supply : 2.3V ~ 2.7V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 144-LFBGA

Supplier Device Package : 144-LFBGA (12x12)

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Product Details

FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system
frequency up to 933 MHz
● 8 internal banks for concurrent operation
● 8n-bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
● Write Leveling
● Up to 200 MHz on DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	IS43R32400E
Type	DDR1
Packaging	Tape & Reel (TR) Alternate Packaging
Mounting-Style	SMD/SMT
Package-Case	144-LFBGA
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	2.3 V ~ 2.7 V
Supplier-Device-Package	144-LFBGA (12x12)
Memory Capacity	128M (4M x 32)
Memory-Type	DDR SDRAM
Speed	200MHz
Access-Time	5 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 70 C
Operating temperature range	0 C
Organization	4 M x 32
Supply-Current-Max	320 mA
Data-Bus-Width	32 bit
Supply-Voltage-Max	2.7 V
Supply-Voltage-Min	2.3 V
Package-Case	LFBGA-144
Maximum-Clock-Frequency	200 MHz

Descriptions

SDRAM - DDR Memory IC 128Mb (4M x 32) Parallel 200MHz 700ps 144-LFBGA (12x12)

DRAM Chip DDR SDRAM 128Mbit 4Mx32 2.5V 144-Pin LFBGA T/R

DRAM 128M (4Mx32) 200MHz DDR 2.5v

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